Economy, business and finance
India's first vertically integrated SiC semiconductor unit nears production

RIR Power Electronics has installed key equipment at its Rs 618 crore Bhubaneswar facility, which is expected to begin operations within the next three months.
India’s first vertically integrated silicon carbide (SiC) semiconductor manufacturing facility is likely to start commercial production soon, with RIR Power Electronics Limited completing the physical infrastructure and installation of key equipment at its facility near Bhubaneswar.
The company on Thursday said the Rs 618 crore project being developed at the electronic manufacturing cluster in Info Valley-II is at an advanced stage of completion. It has completed the erection and installation of state-of-the-art SiC epitaxial wafer manufacturing reactors at its upcoming facility.
The facility will commence commercial production upon completion of the remaining statutory and regulatory formalities. The key equipment required for the SiC epitaxial wafer manufacturing process has been installed, while essential power connections, utilities and other supporting infrastructure have been commissioned.
Harshad Mehta, non-executive chairman of RIR Power Electronics Limited, said the Bhubaneswar facility is expected to commence operations in the next three months, subject to completion of the remaining regulatory processes.
"The facility is being developed through a phased approach. Phase I establishes our epitaxy and packaging capabilities, while the subsequent phase will progressively build our fabrication capabilities. This will allow RIR to move towards a vertically integrated 'silicon carbide to system' ecosystem, spanning wafers, power semiconductor devices and system-level solutions. In the initial phase, we expect production of around 750 SiC Epi wafers by the end of December 2026 going up to 20,000 wafers by the end of 2027," he told Business Standard.